News archive
- 24.01.23webinars on solid state batteries
- 13.12.22Viruses under cryo ARM
- 27.09.22Coffee Talks Series
- 17.03.22News for Cryo-Electron-Microscopists
- 03.11.21Omnicontrol; control everything
- 09.08.21Atomic resolution electron microscope
- 21.04.21Do you have a wish regarding additional training?
- 24.03.21Jacomex glove boxes
- 05.03.21Anture article, Cryo Tomography, Cryo TEM, Atribacteria cell membrane structure
- 05.03.21GC-TQMS analytical solutions for food and water safety
- 01.03.21NMR webinar
- 25.02.21in-situ TEM paper
JEOL advantages
03.05.19
JEOL manufactures excellent FEGSEM electron microscopes with high resolution. Those have some patented advantages like:
- INLENS GUN (high and stable electronic currents for excellent analyzes with good spatial resolution even at low acceleration voltages 5kV)
- ACL - additional ACL lens (controls the diameter of the electron beam where the electron current can be changed arbitrarily from large to small; allows a large depth of field, which is greater than with conventional scanning electron microscopes)
Another advantage for is that for FEGSEM microscopes JEOL provides a 3-year guarantee for continuous emission of FEGSEM source.
Call us and we will be happy to advise you on a suitable FEGSEM model for your needs.
Superior resolution: JEOL uses a very conservative approach for measuring resolution in its catalogs and prefers to list in catalogs resolutions that are seemingly inferior to the competition, but in reality customer will allways get much better resolution as stated.
For example, for the JSM IT 800 HL model, the resolutions stated in the catalogue can be proven at the customer site with the conservative edge method. There are different ways of resolution measurements , according to the ISO STD 25497: 2011 derivative method or according to the edge method 35% -65%, which is also widely used. JEOL can prove excellent resolution in its FEGSEMs by the method of your choice.
|
JSM IT 800 HL |
conservative method in the brochure – edge method – guaranteed values |
ISO STD 25497:2011 derivative method – guaranteed values |
Attainable resolutions and guaranteed values - Edge metoda 35%-65% |
High vacuum (HV), SEI |
20kV |
0,7nm |
0,65nm |
<0,6nm |
1kV |
1,3 nm |
< 1 nm |
0,9nm |
|
15kV, 5nA and analytical W.D. |
3nm |
1,9nm |
<1,9nm |
|
Low vacuum (LV) |
30kV , 10Pa |
1,3 nm |
1,3nm |
1,3 nm |